批发高频三极管2SC3357/RF ,SOT-89
| 价 格： | 0.55 |
| 是否提供加工定制：是 | 品牌：NEC/日本电气 | 型号：2SC3357 |
| 应用范围：放大 | 极性：NPN型 | 集电极允许电流ICM：0.1（A） |
| 集电极耗散功率PCM：1（W） | 截止频率fT：6.5（MHz） | 结构：点接触型 |
| 封装形式：贴片型 | 封装材料：塑料封装 |
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
• Large PT in Small Package
PT : 2 W with 16 cm2 ´ 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT* 1.2 W
Thermal Resistance Rth(j-a)* 62.5 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to +150 °C
* mounted on 16 cm2 ´ 0.7 mm Ceramic Substrate
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 许惠谦
- 电话：0755-82533222
- 传真：0755-82533222
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三极管2SC945
信息内容：加工定制：是品牌：TXF型号：2SC945应用范围：放大材料：硅(Si)极性：NPN型击穿电压VCEO：`（V） 集电极允许电流ICM：`（A） 集电极耗散功率PCM：`（W） 截止频率fT：`（MHz） 结构：平面型封装形式：直插型封装材料：塑料封装2Sc945厂家直销，价格优惠，质量保证，欢迎来电查询！FEATURESPOWE DISSIPATIONPCM:0.4W(TAMB=25)COLLECTO CU ENTICM:0.15AV(BR)CBO:60VOPE ATING AND STORAGE JUNCTION TEMPERATURE RANGETJ,TATG:-55 TO+1502Sc945厂家直销，价格优惠，质量保证，欢迎来电查询！FEATURESPOWE DISSIPATIONPCM:0.4W(TAMB=25)COLLECTO CU ENTICM:0.15AV(BR)CBO:60VOPE ATING AND STORAGE JUNCTION TEMPERATURE RANGETJ,TATG:-55 TO+150"
三极管2N3904
信息内容：是否提供加工定制：是品牌：TXF型号：2N3904应用范围：放大材料：硅(Si)集电极允许电流ICM：0.2（A） 集电极耗散功率PCM：0.625（W） 截止频率fT：300（MHz） 结构：平面型封装形式：TO-92封装材料：塑料封装 2N3904 NPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.0 VIC Collector Current - Continuous 200 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to ...
