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批发供应FQPF5N60C场效应管

价 格: 1.50

品牌:FAIRCHILD/仙童型号:FQPF5N60C种类:绝缘栅(MOSFET)
沟道类型:N沟道导电方式:增强型用途:SW-REG/开关电源
封装外形:P-DIT/塑料双列直插材料:N-FET硅N沟道开启电压:`(V)
夹断电压:`(V) 极间电容:`(pF) 低频噪声系数:`(dB)
漏极电流:`(mA) 耗散功率:`(mW)

FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

 

Features
• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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场效应管FQPF4N60C

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品牌:FAIRCHILD/仙童型号:FQPF4N60C种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型用途:SW-REG/开关电源封装外形:P-DIT/塑料双列直插开启电压:`(V) 夹断电压:600(V) 极间电容:`(pF) 低频噪声系数:`(dB) 漏极电流:`(mA) 耗散功率:`(mW) FQPF4N60600V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply Features• 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 8.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability"

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