让卖家找上门
发布询价>>
您所在的位置:仪器仪表网> 电子元器件>1.5A双高速功率MOSFET驱动器TC4426AEOA

1.5A双高速功率MOSFET驱动器TC4426AEOA

价 格: 面议

品牌:MICROCHIP/微芯型号:TC4426AEOA种类:绝缘栅(MOSFET)
沟道类型:N沟道导电方式:增强型用途:CC/恒流
封装外形:SMD(SO)/表面封装材料:N-FET硅N沟道

原装现货Features:
• High Peak Output Current – 1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability – 1000 pF
in 25 ns (typ.)
• Short Delay Times – 30 ns (typ.)
• Matched Rise, Fall and Delay Times
• Low Supply Current:
- With Logic ‘1’ Input – 1 mA (typ.)
- With Logic ‘0’ Input – 100 μA (typ.)
• Low Output Impedance – 7Ω (typ.)
• Latch-Up Protected: Will Withstand 0.5A Reverse
Current
• Input Will Withstand Negative Inputs Up to 5V
• ESD Protected – 4 kV
• Pin-compatible with TC426/TC427/TC428 and
TC4426/TC4427/TC4428
• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN
Packages

应用范围:
开关电源
线路驱动器
脉冲变压器驱动器

邹荣财
公司信息未核实
  • 所属城市:广东 深圳
  • [联系时请说明来自维库仪器仪表网]
  • 联系人: 邹荣财
  • 电话:86 0755 28580524
  • 传真:86 0755 28580524
  • 手机:13728709180
  • QQ :
公司相关产品

MOS管IRLMS5703TRPBF

信息内容:

品牌:IR/国际整流器型号:IRLMS5703TRPBF种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型用途:GEP/互补类型封装外形:SMD(SO)/表面封装材料:N-FET硅N沟道原装现货PC823PC925PC927PC357TLP181TLP281-4TLP2805-4TLP127-1TLP2801-4PC929"

详细内容>>

MOS管IRLL014TRPBF/VIHLL014

信息内容:

品牌:IR/国际整流器型号:IRLL014TRPBF种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型用途:MOS-HBM/半桥组件封装外形:SMD(SO)/表面封装材料:GE-P-FET锗P沟道原装现货FEATURES• Halogen-free According to IEC 61249-2-21Definition• Surface Mount• Available in Tape and Reel• Dynamic dV/dt Rating• Logic-Level Gate Drive•RDS(on) Specified at VGS = 4 V and 5 V•Fast Switching• Ease of Paralleling• Compliant to RoHS Directive 2002/95/ECDESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The SOT-223 package is designed for surface-mountingusing vapor phase, infrared, or wave soldering techniques.Its unique package design allows for easy automaticpick-and-place as with other SOT or SOIC packages buthas the added advantage of improved thermal performacedue to an enlarged tab for heatsinking. Power dissipation ofgreater th...

详细内容>>

相关产品