MOS管SI4884DY
| 价 格： | 面议 |
| 品牌：Vishay/威世通 | 型号：SI4884DY | 种类：绝缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 封装外形：SMD(SO)/表面封装 |
| 材料：N-FET硅N沟道 | 开启电压：5（V） | 夹断电压：6（V） |
| 低频跨导：20（μS） | 极间电容：650（pF） | 低频噪声系数：50（dB） |
| 漏极电流：30（mA） | 耗散功率：20（mW） |
Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:12A; On-Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V
General Description Features
Absolute Maximum Ratings TA = 25o
C unless other wise noted
Symbol Parameter Si4884DY Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a) 11.5 A
- Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Si4884DY Rev.A
11.5 A, 30 V. RDS(ON)
= 0.010 Ω @ VGS = 10 V
RDS(ON)
= 0.015 Ω @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching.
Low gate charge (typical Qg = 19 nC).
SOT-23 SuperSOTTM-8 SOIC-16 SO-8 SOT-223 SuperSOTTM-6
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
- 所属城市：广东 深圳
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500V-MOS管IRF840
信息内容：品牌：IR/国际整流器型号：IRF840种类：绝缘栅(MOSFET)沟道类型：N沟道导电方式：增强型用途：TR/激励、驱动材料：N-FET硅N沟道开启电压：20（V） 夹断电压：40（V） 跨导：250（μS） 极间电容：1300（pF） 低频噪声系数：20（dB） 漏极电流：125（mA） 耗散功率：80（mW） Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) - International Rectifier原装无铅大量现货，货源稳定快速开关
1.5A双高速功率MOSFET驱动器TC4426AEOA
信息内容：品牌：MICROCHIP/微芯型号：TC4426AEOA种类：绝缘栅(MOSFET)沟道类型：N沟道导电方式：增强型用途：CC/恒流封装外形：SMD(SO)/表面封装材料：N-FET硅N沟道原装现货Features:• High Peak Output Current – 1.5A• Wide Input Supply Voltage Operating Range:- 4.5V to 18V• High Capacitive Load Drive Capability – 1000 pFin 25 ns (typ.)• Short Delay Times – 30 ns (typ.)• Matched Rise, Fall and Delay Times• Low Supply Current:- With Logic ‘1’ Input – 1 mA (typ.)- With Logic ‘0’ Input – 100 μA (typ.)• Low Output Impedance – 7Ω (typ.)• Latch-Up Protected: Will Withstand 0.5A ReverseCurrent• Input Will Withstand Negative Inputs Up to 5V• ESD Protected – 4 kV• Pin-compatible with TC426/TC427/TC428 andTC4426/TC4427/TC4428• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFNPackages应用范围：•开关电源•线路驱动器•脉冲变压器驱动器
