品牌:IR/国际整流器 | 型号:IRLMS6702TRPBF | 种类:绝缘栅(MOSFET) |
沟道类型:P沟道 | 导电方式:增强型 | 用途:D/变频换流 |
封装外形:SMD(SO)/表面封装 | 材料:GE-P-FET锗P沟道 |
原装现货
PC823 |
PC925 |
PC927 |
PC357 |
TLP181 |
TLP281-4 |
TLP2805-4 |
TLP127-1 |
TLP2801-4 |
PC929 |
品牌:FAIRCHILD/仙童型号:FDFS2P106A种类:绝缘栅(MOSFET)沟道类型:P沟道导电方式:增强型用途:DC/直流封装外形:SMD(SO)/表面封装材料:P-FET硅P沟道开启电压:60(V) 夹断电压:80(V) 跨导:10(μS) 极间电容:714(pF) 低频噪声系数:10(dB) 漏极电流:100(mA) 耗散功率:10(mW) 原装现货General DescriptionThe FDFS2P106A combines the exceptionalperformance of Fairchild's PowerTrench MOSFETtechnology with a very low forward voltage dropSchottky barrier rectifier in an SO-8 package. This device is designed specifically as a single packagesolution for DC to DC converters. It features a fastswitching, low gate charge MOSFET with very low on-state resistance. The independently connectedSchottky diode allows its use in a variety of DC/DCconverter topologies."
品牌:FAIRCHILD/仙童型号:FDFS2P102种类:绝缘栅(MOSFET)沟道类型:P沟道导电方式:增强型用途:D/变频换流封装外形:SMD(SO)/表面封装材料:P-FET硅P沟道开启电压:20(V) 夹断电压:40(V) 跨导:10(μS) 极间电容:275(pF) 低频噪声系数:1(dB) 漏极电流:10(mA) 耗散功率:10(mW) P沟道晶体管和肖特基二极管的集成General DescriptionThe FDFS2P102 combines the exceptional performance ofFairchild's high cell density MOSFET with a very low forwardvoltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solutionfor DC to DC converters. It features a fast switching, low gatecharge MOSFET with very low on-state resistance. Theindependently connected Schottky diode allows its use in a varietyof DC/DC converter topologies.Applications• DC/DC converters• Load Switch• Motor Drives•直流/直流转换器•负荷开关•电机驱动器