品牌:IR/国际整流器 | 型号:IRFL014N | 种类:绝缘栅(MOSFET) |
沟道类型:P沟道 | 导电方式:增强型 | 用途:MOS-HBM/半桥组件 |
封装外形:SMD(SO)/表面封装 | 材料:P-FET硅P沟道 | 开启电压:60(V) |
夹断电压:15(V) | 跨导:20(μS) | 极间电容:300(pF) |
低频噪声系数:35(dB) | 漏极电流:16(mA) | 耗散功率:20(mW) |
大量现货请查询www.jicic.com
1Surface Mount
2Avaibable in Tape& Reel
3Dynamic dv/dt Rating
4Ease of Paralleling
5Simple Drive Requirements
1Surface Mount
2Avaibable in Tape& Reel
3Dynamic dv/dt Rating
4Ease of Paralleling
5Simple Drive Requirements
1Surface Mount
2Avaibable in Tape& Reel
3Dynamic dv/dt Rating
4Ease of Paralleling
5Simple Drive Requirements
"
品牌:IR/国际整流器型号:IRFR9024N种类:绝缘栅(MOSFET)沟道类型:P沟道导电方式:增强型用途:MOS-FBM/全桥组件封装外形:SMD(SO)/表面封装材料:GE-P-FET锗P沟道开启电压:60(V) 夹断电压:20(V) 跨导:120(μS) 极间电容:570(pF) 低频噪声系数:20(dB) 漏极电流:88(mA) 耗散功率:25(mW) 原装无铅现货PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-11A)"
品牌:IR/国际整流器型号:IRLMS6802TRPBF种类:绝缘栅(MOSFET)沟道类型:P沟道导电方式:增强型用途:LMP-C/阻抗变换封装外形:SMD(SO)/表面封装材料:GE-P-FET锗P沟道原装现货Ultra Low On-ResistanceP-Channel MOSFETSurface MountAvailable in Tape & Reel"