价 格: | 面议 | |
型号/规格: | IRFZ44ZPBF | |
品牌/商标: | IR | |
封装形式: | TO-220 | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 单件包装 | |
功率特征: | |
IRFZ44ZPBF IR TO-220 08NPB DIP/MOS N场 55V 51A 13.9mΩ
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=250µA | 55 | V |
Continuous drain current | ID | TC=25℃ | 51 | A |
Pulsed drain current | IDM | TC=25℃ | 200 | A |
Power dissipation | Ptot | TC=25℃ | 80 | W |
Gate source voltage | VGS | ±20 | V | |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 4 | V |
Avalanche energy, single pulse | EAS | ID=31A, RGS=25Ω | 86 | mJ |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=31A | 13.9 | mΩ |
Input capacitance | Ciss | VGS=0V,VDS=25V, f=1MHz | 1420 | PF |
Transconductance | gfs | VDS=25V, ID =31A | 22 | S |
STP80NF55,ST,TO-220,N场,55V,80A,0.008Ω STP85NF55,ST,TO-220,N场,55V,80A,0.008Ω Parameter Symbol Conditions Value Unit Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=250µA 55 V Continuous drain current ID TC=25℃ 80 A Pulsed drain current IDM TC=25℃ 320 A Power dissipation Ptot TC=25℃ 300 W Gate source voltage VGS ±20 V Gate threshold vol...
产品型号:FCPF13N60NT 封装:TO-220F 源漏极间雪崩电压V(br)dss(V):600 夹断电压VGS(V):±30 漏极电流Id(A):13 源漏极导通电阻rDS(on)(Ω):0.258 @VGS = 10 V 开启电压VGS(TH)(V):4 功率PD(W):33.8 极间电容Ciss(PF):1325 通道极性:N沟道 低频跨导gFS(s):16.3 单脉冲雪崩能量EAS(mJ):235 温度(℃): -55 ~150 描述:600V,13A N-Channel MOSFET