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供应场效应管 STP85NF55

价 格: 面议
型号/规格:STP85NF55
品牌/商标:ST(意法半导体)
封装形式:TO-220
环保类别:无铅环保型
安装方式:直插式
包装方式:1K/盒
功率特征:

 

STP80NF55,ST,TO-220,N场,55V,80A,0.008Ω

STP85NF55,ST,TO-220,N场,55V,80A,0.008Ω

 

Parameter Symbol Conditions Value Unit
Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=250µA 55 V
Continuous drain current ID TC=25℃ 80 A
Pulsed drain current IDM TC=25℃ 320 A
Power dissipation Ptot TC=25℃ 300 W
Gate source voltage VGS   ±20 V
Gate threshold voltage VGS(th) VDS=VGS,ID=250µA 4 V
Avalanche energy, single pulse EAS ID=25A, RGS=25? 980 mJ
Drain-source on-state resistance RDS(on) VGS=10V, ID=40A 8 m?
Input capacitance Ciss VGS=0V,VDS=15V, f=1MHz 3700 PF
Transconductance gfs VDS=15V, ID =40A 120 S

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