三极管 原装ST L6562D
| 价 格： | 面议 | |
| 型号/规格： | L6562D | |
| 品牌/商标： | ST（意法半导体） | |
| 封装形式： | SOP-8 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 盒带编带包装 | |
| 功率特性： | | |
| 频率特性： | | |
| 极性： | |
TRANSITION-MODE PFCCONTROLLER
Others with the same file for datasheet:
L6562,L6562N,L6562DTR,
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现货特价 原装进口 仙童MOS管 FQPF8N60C
信息内容：General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild(R)(TM)s proprietary planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features 7.5A, 600V, R = 1.2? @V = 10 V DS(on) GS Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability
场效应管 仙童 特价热销 FDP18N50
信息内容：FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge ( typical 45 nC) • Low Crss ( typical 25 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
