General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild(R)(TM)s proprietary
planar stripe,  DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

Features
7.5A, 600V, R  = 1.2? @V  = 10 V
DS(on) GS
Low gate charge ( typical  28 nC)
Low Crss ( typical  12 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

 

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