价 格: | 0.10 | |
型号/规格: | 4N40 | |
品牌/商标: | UTC(t台湾友顺) | |
封装形式: | TO-252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
FEATURES
* High switching speed
* 4A, 400V, RDS(ON)=2.0Ω @ VGS=10V
* 100% avalanche tested
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS DESCRIPTION PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V * On-state current rating of 0.8A RMS at 80°C * High surge current capability – 10A * Minimum and maximum values of IGT, VGT and IH specified for ease of design * Immunity to dV/dt – 20V/μsec minimum at 110°C * Glass-passivated surface for reliability and uniformity
DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors(MOSFET) are produced by UTC!ˉs planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control. FEATURES * R = 0.1 @V = 10 V DS(ON) GS * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( C = typical 32pF ) RSS * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness