utc MOS场效应管 22N20
| 价 格： | 0.10 | |
| 型号/规格： | 22N20 | |
| 品牌/商标： | UTC(t台湾友顺） | |
| 封装形式： | TO-220F | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | |
FEATURES
* VDS = 200V
* ID = 22A
* Fast switching
* RDS(on) = 0.14Ω @VGS = 10 V
* Typically 20nC low gate charge
* 100% avalanche tested
* Typically 25pF Low CRSS
* Improved dv/dt capability
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现货供应utc MOS场效应管 UF634
信息内容：FEATURES * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Current: 10μA (MAX.) @ VDS = 250V * Avalanche Rugged Technology * Rugged Gate Oxide Technology * Extended Safe Operating Area 粤嘉鸿电子是一家从事的电子元器件销售的一般纳税人企业，有多年的MOS管、电源IC、三极管的供应经验和渠道，是UTC（台湾友顺）的一线授权代理商。我们经营的产品广泛应用于开关电源、LED灯电源、适配器、车载逆变电源、液晶电视电源、DVD和DVB电源板、通信逆变电源、电动工具电源、应急灯电源、手机充电器等诸多领域
现货特价供UTC 1N60L插件TO251场效应管
信息内容：1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON)=11.5Ω@VGS= 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Drain-Source Voltage 1N60-A VDSS,600V 1N60-B 650V
