现货供应utc MOS场效应管 UF634
| 价 格： | 0.10 | |
| 型号/规格： | UF634 | |
| 品牌/商标： | UTC(t台湾友顺） | |
| 封装形式： | TO-220F | |
| 环保类别： | 普通型 | |
| 安装方式： | 直插式 | |
| 包装方式： | 管装 | |
| 功率特征： | |
FEATURES
* Lower Input Capacitance
* Improved Gate Charge
* Lower Leakage Current: 10μA (MAX.) @ VDS = 250V
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Extended Safe Operating Area
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现货特价供UTC 1N60L插件TO251场效应管
信息内容：1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON)=11.5Ω@VGS= 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Drain-Source Voltage 1N60-A VDSS,600V 1N60-B 650V
utc 一级代理MOS场效应管 2N60
信息内容：2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) =5Ω@VGS= 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
