TSM103 /
双运算放大器和
电压基准
TSM103 /
2/9
额定值
电气特性
符号参数值单位
VCC电源电压36伏
VID的差分输入电压36伏
VI的输入电压-03。至+36 V
锥形经营自由空气的温度范围-55至+125°C
TJ结温度为150°C间
rthja结到环境热阻(SO封装)175℃/ W
符号参数最小值。典型。。单位
国际刑事法院
总电源电流,但不包括在当前
参考电压
VCC = 5V,空载
TMIN。 <TAMB <温度。
VCC = 30V,无负载
TMIN。 <TAMB <温度
FEATURES * Typically 35 nC Low Gate Charge * RDS(ON) = 1.45Ω @VGS = 10V * Typically 13 pF Low CRSS * Improved dv/dt Capability * Fast Switching Speed * 100% Avalanche Tested * RoHS–Compliant Product
800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω @VGS = 10 V * Ultra low gate charge ( typical 45 nC ) * Low reverse transfer capacitance ( CRSS = typical 15 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness