价 格: | 0.10 | |
型号/规格: | 8N80 | |
品牌/商标: | UTC(t台湾友顺) | |
封装形式: | TO-220F | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 管装 | |
功率特征: | |
FEATURES
* Typically 35 nC Low Gate Charge
* RDS(ON) = 1.45Ω @VGS = 10V
* Typically 13 pF Low CRSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω @VGS = 10 V * Ultra low gate charge ( typical 45 nC ) * Low reverse transfer capacitance ( CRSS = typical 15 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.4Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness