Features
n Wide 4.5V to 40V Input Voltage Range
n 3.3V,5V,12V, and adjustable versions
n Output Adjustable from 1.23V to 37V
n Maximum Duty Cycle 100%
n Minimum Drop Out 1.5V
n Fixed 150KHz Switching Frequency
n 2A Constant Output Current Capability
n Internal Optimize Power Transistor
n High efficiency
n Excellent line and load regulation
n TTL shutdown capability
n ON/OFF pin with hysteresis function
n Built in thermal shutdown function
n Built in current limit function
n Built in second current limit function
n Available in SOIC8 package
30V P-CHANNEL POWER MOSFETDESCRIPTIONThe UT4435 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON)≤20mΩ @VGS=-10V* RDS(ON)≤ 35mΩ @VGS=-4.5V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified
600V N-Channel MOSFETFeatures■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V■ Gate charge (Typical 17nC)■ High ruggedness■ Fast switching■ 100% AvalancheTested■ Improved dv/dt capabilityGeneral DescriptionThis Power MOSFET is produced using Truesemi’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics, such as fast switching time,lowon resistance.low gate charge and especially excellent avalanchecharacteristics. This power MOSFET is usually used at ACadaptors, on the battery charger and SMPS