价 格: | 0.10 | |
型号/规格: | UT4435 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | SOP-8 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
30V P-CHANNEL POWER MOSFET
DESCRIPTION
The UT4435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON)≤20mΩ @VGS=-10V
* RDS(ON)≤ 35mΩ @VGS=-4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
600V N-Channel MOSFETFeatures■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V■ Gate charge (Typical 17nC)■ High ruggedness■ Fast switching■ 100% AvalancheTested■ Improved dv/dt capabilityGeneral DescriptionThis Power MOSFET is produced using Truesemi’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics, such as fast switching time,lowon resistance.low gate charge and especially excellent avalanchecharacteristics. This power MOSFET is usually used at ACadaptors, on the battery charger and SMPS
P-CHANNEL ENHANCEMENT MODEDESCRIPTIONThe UTC UT2305 is P-channel enhancement mode PowerMOSFET, designed in serried ranks. With fast switching speed, lowon-resistance, favorable stabilization.Used in commercial and industrial surface mount applicationsand suited for low voltage applications such as DC/DC converters