价 格: | 0.10 | |
型号/规格: | 2N60 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-251 TO-252 | |
环保类别: | 普通型 | |
安装方式: | 直插式和贴片式 | |
包装方式: | 管装和编带包装 | |
功率特征: | |
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =5Ω@VGS= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
DESCRIPTIONThe UTC 12N65 are N-Channel enhancement mode powerfield effect transistors (MOSFET) which are produced using UTC’sproprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation mode the advanced technology hasbeen especially tailored.FEATURES* RDS(ON) = 0.7Ω @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
1,和2SD1616/2SD1616A是对管。 2,0.2V超低压降.损耗小. 3,60V/80V高耐压! PNP EPITAXIAL SILICONTRANSISTORDESCRIPTIONComplement to UTC 2SD1616/A