价 格: | 0.10 | |
型号/规格: | 7N60 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-220F | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 管装 | |
功率特征: | |
DESCRIPTION:
The UTC 7N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1.0Ω @VGS = 10 V (7N60)
RDS(ON) = 1.2Ω @VGS = 10 V (7N60-F/7N60-L/7N60-M/7N60-Q)
* Ultra low gate charge (typical 29 nC )
* Low reverse transfer Capacitance ( CRSS = typical 16pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
600V N-Channel MOSFETFeatures■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V■ Gate charge (Typical 17nC)■ High ruggedness■ Fast switching■ 100% AvalancheTested■ Improved dv/dt capabilityGeneral DescriptionThis Power MOSFET is produced using Truesemi’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics, such as fast switching time,lowon resistance.low gate charge and especially excellent avalanchecharacteristics. This power MOSFET is usually used at ACadaptors, on the battery charger and SMPS
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe 2N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high ruggedavalanche characteristics. This power MOSFET is usually used athigh speed switching applications in power supplies, PWM motorcontrols, high efficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) =5Ω@VGS= 10V* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (CRSS = typical 5.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness