价 格: | 0.10 | |
型号/规格: | 8N60L | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-220F | |
环保类别: | 无铅环保型 | |
安装方式: | 直插式 | |
包装方式: | 管装 | |
功率特征: | |
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) =1.2Ω@VGS= 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
DESCRIPTION:The UTC 7N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in switching power supplies and adaptors.FEATURES* RDS(ON) = 1.0Ω @VGS = 10 V (7N60)RDS(ON) = 1.2Ω @VGS = 10 V (7N60-F/7N60-L/7N60-M/7N60-Q)* Ultra low gate charge (typical 29 nC )* Low reverse transfer Capacitance ( CRSS = typical 16pF )* Fast switching capability* Avalanche energy tested* Improved dv/dt capability, high ruggedness
600V N-Channel MOSFETFeatures■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V■ Gate charge (Typical 17nC)■ High ruggedness■ Fast switching■ 100% AvalancheTested■ Improved dv/dt capabilityGeneral DescriptionThis Power MOSFET is produced using Truesemi’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics, such as fast switching time,lowon resistance.low gate charge and especially excellent avalanchecharacteristics. This power MOSFET is usually used at ACadaptors, on the battery charger and SMPS