价 格: | 0.10 | |
型号/规格: | UT4435 | |
品牌/商标: | UTC | |
封装形式: | SOP-8 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
30V P-CHANNEL POWER MOSFET
DESCRIPTION
The UT4435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON)≤20mΩ @VGS=-10V
* RDS(ON)≤ 35mΩ @VGS=-4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 8N60 is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in powersupplies, PWM motor controls, high efficient DC to DC convertersand bridge circuits.FEATURES* RDS(ON) =1.2Ω@VGS= 10 V* Ultra low gate charge ( typical 28 nC )* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
7 Amps, 700 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 7N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 1.5Ω @VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 18 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness