价 格: | 0.10 | |
型号/规格: | 7N70 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-220F | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
7 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N70 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
600V N-Channel MOSFETFeatures■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V■ Gate charge (Typical 17nC)■ High ruggedness■ Fast switching■ 100% AvalancheTested■ Improved dv/dt capabilityGeneral DescriptionThis Power MOSFET is produced using Truesemi’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics, such as fast switching time,lowon resistance.low gate charge and especially excellent avalanchecharacteristics. This power MOSFET is usually used at ACadaptors, on the battery charger and SMPS
P-CHANNEL ENHANCEMENT MODEDESCRIPTIONThe UTC UT3413 is P-channel enhancement mode PowerMOSFET, designed with high density cell, with fast switching speed,low on-resistance, excellent thermal and electrical capabilities andoperation with low gate voltages.This device is suitable for use as a load switch or in PWM