价 格: | 0.10 | |
型号/规格: | UF830 IRF830 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO252 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
1,UTC品牌台产高品质MOS管。2,TO-252小贴片封装。3,供应稳定可靠,货期短!
4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
FEATURES
* 4.5A, 500V, RDS(ON)=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
DUAL N-CHANNEL ENHANCEMENT MODEFEATURES* 20V/6A* Low RDS(ON)* Reliable and Rugged SYMBOL
30V P-CHANNEL POWER MOSFETDESCRIPTIONThe UT4435 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON)≤20mΩ @VGS=-10V* RDS(ON)≤ 35mΩ @VGS=-4.5V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified