价 格: | 0.10 | |
型号/规格: | 3N70 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-251 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
1,常备现货供应,是缩短货期和降低成本的优质选择。
3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET
? DESCRIPTION
The UTC 3N70 is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
? FEATURES
* RDS(ON) ≤4.0Ω @VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
IR品牌原装现货供应。 FeaturesAdvanced Planar TechnologyLow On-ResistanceDynamic dV/dT Rating175°C Operating TemperatureFast SwitchingFully Avalanche RatedRepetitive Avalanche Allowed upto TjmaxLead-Free, RoHS CompliantAutomotive Qualified* DescriptionSpecifically designed for Automotive applications,this cellular design of HEXFET® Power MOSFETsutilizes the latest processing techniques to achievelow on-resistance per silicon area. This benefitcombined with the fast switching speed andruggedized device design that HEXFET powerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein Automotive and a wide variety of other applications.
1、TO-251小插件封装。80PCS/管。 2、韩产高品质MOS管。 3、现货特价供应。珠三角支持快递代收,全国支持支付宝。 1 Amps, 600/650 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.FEATURES* RDS(ON)=11.5Ω@VGS= 10V.* Ultra Low gate charge (typical 5.0nC)* Low reverse transfer capacitance (CRSS = typical 3.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness