价 格: | 0.10 | |
型号/规格: | 1N60 | |
品牌/商标: | TSU1N60 | |
封装形式: | TO-251 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
1、TO-251小插件封装。80PCS/管。
2、韩产高品质MOS管。 3、现货特价供应。珠三角支持快递代收,全国支持支付宝。
1 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
HIGH PERFORMANCE CURRENT MODE POWER SWITCHDESCRIPTIONThe UTC UPS604 is designed to provide several specialenhancements to satisfy the needs, for example, Power-Savingmode for low standby power (<0.3W), Frequency Hopping ,Constant Output Power Limiting , Slope Compensation ,OverCurrent Protection (OCP), Over Voltage Protection (OVP), OverLoad Protection (OLP), Under Voltage Lock Out (UVLO), ShortCircuit Protection (SCP) , Over Temperature Protection (OTP) etc.IC will be shutdown or can auto-restart in situations.FEATURE* Low startup current (about 22μA)* Fixed switching frequency(Norm. is 68KHz)* Frequency hopping for Improved EMI Performance.* Lower than 0.3W Standby Power Design* Linearly decreasing frequency to 26KHz during light load* Soft start* Internal Slope Compensation* Constant Power Limiting for universal AC input Range* Gate Output Maximum Voltage Clamp(15V)* Max duty cycle 74%* Over temperature protection* Overload protection* Over voltage protection* Leading edge b...
1,完美替代仙童、IR、AOS同参数产品,超低导通阻抗。 2,常备大量现货,特价热销,可立即发货。 3,可免费索样,支持支付宝交易,并承担产品质量因起的损失! DESCRIPTIONThe NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =10ARDS(ON) < 13.5mΩ @ VGS=10VRDS(ON) < 20mΩ @ VGS=4.5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and currentApplication●Power switching application●Hard Switched and High Frequency Circuits●Uninterruptible Power Supply