让卖家找上门
发布询价>>
您所在的位置:仪器仪表网> 电子元器件>UTC一级代理商特价现货供应 开关三极管 MJE13003

UTC一级代理商特价现货供应 开关三极管 MJE13003

价 格: 面议
型号/规格:MJE13003L-C
品牌/商标:UTC
封装形式:TO-126
环保类别:普通型
安装方式:直插式
包装方式:散装
功率特性:
频率特性:
极性:

1、台产优质双极型功率三极管。

2、香港交货或大陆含税交货。

NPN SILICON POWER TRANSISTORS

DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits

深圳市粤嘉鸿电子有限公司
公司信息未核实
  • 所属城市:广东 深圳
  • [联系时请说明来自维库仪器仪表网]
  • 联系人: 于晶
  • 电话:0755-29743120
  • 传真:0755-29743152-808
  • 手机:13802706767
  • QQ :QQ:491057494QQ:613134003QQ:613134002
公司相关产品

UTC品牌3A/700V高压功率MOS管 3N70

信息内容:

1,常备现货供应,是缩短货期和降低成本的优质选择。 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET? DESCRIPTIONThe UTC 3N70 is a high voltage and high current powerMOSFET , designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and have ahigh rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in power supplies,PWM motor controls, high efficient DC to DC converters and bridgecircuits.? FEATURES* RDS(ON) ≤4.0Ω @VGS = 10 V* Ultra low gate charge ( typical 10 nC )* Low reverse transfer capacitance* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness

详细内容>>

原装现货供应IR品牌MOSFET 场效应管 IRFZ34

信息内容:

IR品牌原装现货供应。 FeaturesAdvanced Planar TechnologyLow On-ResistanceDynamic dV/dT Rating175°C Operating TemperatureFast SwitchingFully Avalanche RatedRepetitive Avalanche Allowed upto TjmaxLead-Free, RoHS CompliantAutomotive Qualified* DescriptionSpecifically designed for Automotive applications,this cellular design of HEXFET® Power MOSFETsutilizes the latest processing techniques to achievelow on-resistance per silicon area. This benefitcombined with the fast switching speed andruggedized device design that HEXFET powerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein Automotive and a wide variety of other applications.

详细内容>>

相关产品