品牌/商标 | ON安森美 | 型号/规格 | MBRS4201T3G |
产品类型 | 肖特基管 | 结构 | 点接触型 |
材料 | 硅(Si) | 封装形式 | 贴片型 |
封装材料 | 玻璃封装 | 正向直流电流IF | 4(A) |
反向电压 | 200(V) |
品牌/商标 IR/台湾SIPU 型号/规格 IRLML6402/SPLML6402 种类 绝缘栅(MOSFET) 沟道类型 P沟道 导电方式 增强型 封装外形 SMD(SO)/表面封装 ☆★ Ultra Low On-Resistance☆★P-Channel MOSFET☆★ SOT-23 Footprint☆★Low Profile (<1.1mm)☆★Available in Tape and Reel☆★Fast SwitchingThese P-Channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low onresistanceper silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFETÒpower MOSFETs are well known for, provides the designer withan extremely efficient and reliable device for use in battery andload management.A thermally enhanced large pad leadframe has been incorporatedinto the standard SOT-23 package to produce a HEXFET PowerMOSFET with...
品牌/商标 IR美国国际整流器公司 型号/规格 IRF4905S 种类 绝缘栅(MOSFET) 沟道类型 P沟道 导电方式 耗尽型 用途 MOS-FBM/全桥组件 封装外形 SMD(SO)/表面封装 材料 GE-P-FET锗P沟道 *Advanced Process Technology* Surface Mount (IRF4905S)*Low-profile through-hole (IRF4905L)*175°C Operating Temperature* Fast Switching*P-Channel* Fully Avalanche RatedFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplication...