场效应管IRLML6402 SOT-23
| 价 格： | 0.45 |
| 品牌/商标 | IR/台湾SIPU | 型号/规格 | IRLML6402/SPLML6402 |
| 种类 | 绝缘栅(MOSFET) | 沟道类型 | P沟道 |
| 导电方式 | 增强型 | 封装外形 | SMD(SO)/表面封装 |
☆★ Ultra Low On-Resistance
☆★P-Channel MOSFET
☆★ SOT-23 Footprint
☆★Low Profile (<1.1mm)
☆★Available in Tape and Reel
☆★Fast Switching
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFETÒ
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3ä, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
- 所属城市：广东 东莞
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈煌全
- 电话：0769-85325785
- 传真：0769-85325785
- 手机：
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