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特价现货供应 三极管2SD1623

Applications
• Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
• Adoption of FBET, MBIT processes.
• Low collector-to-emitter saturation voltage.
• Large current capacity and wide ASO.
• Fast switching speed.
• The ultraminiature package facilitates
higher-density mounting, thus allows the applied
hybrid IC’s further miniaturization.
Specifications
( ) : 2SB1123
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)60 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC (--)2 A
Collector Current (Pulse) ICP (--)4 A
Collector Dissipation PC
0.5 W
Mounted on a ceramic board (250mm250.8mm) 1.3 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)50V, IE=0 (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 (--)100 nA
DC Current Gain
hFE(1) VCE=(--)2V, IC=(--)100mA 100* 560*
hFE(2) VCE=(--)2V, IC=(--)1.5A 40
* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows : Continued on next page.
Rank R S T U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
Marking 2SB1123 : BF
2SD1623 : DF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN1727D
2SB1123 / 2SD1623
Package Dimensions
unit : mm
2038A
[2SB1123 / 2SD1623]
N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
4.5
1.6
0.4 0.5
1.5
1.0 2.5
4.25max
3.0
1.5
0.4
0.75
3 2 1
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
2SB1123 / 2SD1623
727-2/5
Continued from preceding page.
Parameter Symbol Conditions
Ratings
Unit
min typ max
Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA 150 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA (--0.3)0.15 (--0.7)0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)50mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10mA, IE=0 (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=¥ (--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10mA, IC=0 (--)6 V
Turn-ON Time ton See specified Test Circuit. (60)60 ns
Storage Time tstg See specified Test Circuit. (450)550 ns
Fall Time tf See specified Test Circuit. (30)30 ns
Switching Time Test Circuit
--2.4
--1.6
--1.2
--0.8
--0.4
--2.0
0
0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4
IC -- VCE
IB=0
ITR08891
2SB1123
Pulse
--2mA
--8mA
--6mA
--4mA
--20mA
--10mA
--50mA
--1200
--800
--600
--400
--200
--1000
0
0 --2 --4 --6 --8 --10 --12
IC -- VCE
IB=0
ITR08893
2SB1123
Pulse
--3mA
--2mA
--1mA
--7mA
--6mA
--5mA
--4mA
1200
800
600
400
200
1000
0
0 2 4 6 8 10 12
IC -- VCE
IB=0
ITR08894
2SD1623
Pulse
3mA
2mA
1mA
7mA
6mA
5mA
4mA
2.4
1.6
1.2
0.8
0.4
2.0
0
0 0.4 0.8 1.2 1.6 2.0 2.4
I

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