特价现货三极管，2SA1037功率三极管
| 价 格： | 0.02 |
| 品牌/商标 | TOSHIBA/长电 | 型号/规格 | 2SA1037 |
| 应用范围 | 功率 | 功率特性 | 中功率 |
| 频率特性 | 中频 | 极性 | PNP型 |
| 结构 | 点接触型 | 材料 | 硅(Si) |
| 封装形式 | sot-23 | 封装材料 | 树脂封装 |
| 截止频率fT | 150（MHz） | 集电极允许电流ICM | 100m（A） |
| 集电极耗散功率PCM | 200m（W） | 营销方式 | 现货 |
| 产品性质 | 热销 |
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特价现货供应 三极管2SA1037
2SA1037
Elektronische Bauelemente - 0.15A, - 50V
2SA1037
2SA1037
Elektronische Bauelemente - 0.15A, - 50V
Small Signal Plastic Encapsulate Transistor
RoHS Compliant Product A suffix of "-C" specifies halogen lead-free
3.Collector
SOT-23
1. Base 2. Emitter
Top View
FEATURES
. Excellent h linearity. . Epitaxial planar type. . PNP silicon transistor.
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
MECHANICAL DATA
. Case: SOT-23, Molded Plastic . Terminals: Solderable per MIL-STD-202,
Method 208
. Polarity: See Diagrams Below . Weight: 0.008 grams (approx.) . Mounting Position: Any
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS
Rating 25 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20. TYPE NUMBER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC TJ TSTG LIMITS - 60 - 50 -6 - 0.15 0.2 150 -55 ~ +150 UNIT V V V A W
http:www.SeCoSGmbH.com
Any changing of specification will not be informed individual
2SA1037
Elektronische Bauelemente - 0.15A, - 50V
Small Signal Plastic Encapsulate Transistor
TYPE NUMBER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. - 60 - 50 -6 120 -
hFE VALUES ARE CLASSIFIED AS FOLLOWS:
ITEM hFE Marking Q 120 ~ 270 FQ R 180 ~ 390 FR S 270 ~ 560 FS
ELECTRICAL CHARACTERISTIC CURVES
COLLECTOR CURRENT : Ic (mA)
COLLECTOR CURRENT : IC (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO MITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics (I)
Fig.3 Grounded emitter output characteristics (II)
http:www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
2SA1037
Elektronische Bauelemente - 0.15A, - 50V
Small Signal Plastic Encapsulate Transistor
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current (I)
Fig.5 DC current gain vs. collector current (II)
Fig.6 Collector-emitter saturation voltage vs. collector current (I)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector-emitter saturation voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs. emitter current
Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage
http:www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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