价 格: | 面议 | |
型号/规格: | UT5003 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | SOP-8 | |
环保类别: | 普通型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | |
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UT5003 can provide excellent RDS (ON) and low gate
charge by using UTC’s advanced trench technology. This device
is suitable for use as a load switch or in PWM applications.
FEATURES
* N-Channel: 30V/7A
RDS(ON) = 27.5mΩ @ VGS =10V
RDS(ON) = 40mΩ @ VGS= 4.5V
* P-Channel: -30V/-5A
RDS(ON) = 45mΩ @ VGS= -10V
RDS(ON) = 80mΩ @ VGS= -4.5V
* Super high dense cell design
* Reliable and rugged
1,UTC品牌高品质小插件4N60,适合于高品质LED球炮灯。 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) = 2.5Ω @VGS = 10 V* Ultra low gate charge ( typical 15 nC )* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggedness
P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO3401 uses advanced trench technology toprovide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 2.5V. Thisdevice is suitable for use as a load switch or in PWMapplications. Standard product AO3401 is Pb-free(meets ROHS & Sony 259 specifications). FeaturesVDS (V) = -30VID = -4.2 A (VGS = -10V)RDS(ON) < 50mΩ (VGS = -10V)RDS(ON) < 65mΩ (VGS = -4.5V)RDS(ON) < 120mΩ (VGS = -2.5V)