价 格: | 面议 | |
型号/规格: | 4N60 | |
品牌/商标: | UTC(台湾友顺) | |
封装形式: | TO-251 | |
环保类别: | 普通型 | |
安装方式: | 直插式 | |
包装方式: | 盒带编带包装 | |
功率特征: | |
1,UTC品牌高品质小插件4N60,适合于高品质LED球炮灯。
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra low gate charge ( typical 15 nC )
* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO3401 uses advanced trench technology toprovide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 2.5V. Thisdevice is suitable for use as a load switch or in PWMapplications. Standard product AO3401 is Pb-free(meets ROHS & Sony 259 specifications). FeaturesVDS (V) = -30VID = -4.2 A (VGS = -10V)RDS(ON) < 50mΩ (VGS = -10V)RDS(ON) < 65mΩ (VGS = -4.5V)RDS(ON) < 120mΩ (VGS = -2.5V)
P-CHANNEL ENHANCEMENT MODE POWER MOSFETDESCRIPTIONThe UT70P02 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON) = 6mΩ @VGS = -10 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified