ST一级代理原装MOS管TYN612
| 价 格： | 1.00 | |
| 型号/规格： | TYN612 | |
| 品牌/商标： | ST意法半导体 | |
| 环保类别： | 无铅环保型 |
TYN612 - HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY - STMicroelectronics
Table 1: Main Features
DESCRIPTION
Available either in sensitive (TS12) or standard
(TN12 / TYN) gate triggering levels, the 12A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits...
Symbol Value Unit
IT(RMS) 12 A
VDRM/VRRM 600 to 1000 V
IGT 0.2 to 15 mA
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供应IR原装进口MOS管/场效应管I-PAK IRFU3910PbF
信息内容：昆山现货IR原装进口MOS管/场效应管IRFU3910PbF I-PAK封装 产品型号: IRFU3910 产品名称: 品牌/产地: IR公司 封装规格: I-Pak 产品描述: 是否含铅: 未知 PDF分类: 非IC器件 > 分立器件 > 晶体管 产品参数信息: 参数名 参数值 Circuit Discrete Polarity N VBRDSS (V) 100 RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) 115 ID @ TC = 25C (A) 15 ID @ TC = 100C (A) 9.5 ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) 29.3 Qgd Typ (nC) 14 Rth(JC) (K/W) 2.4 Power Dissipation @ TC = 25C ( 52 Power Dissipation @ TA = 25C ( Part Status Active PbF PbF Option Available 1K Budgetary Pricing (USD) .975 数据手册: 文件名: NULL 文件大小: 0.00 KB 下载次数: 3 下载:
IR进口MOS管IRF3415
信息内容：种类：绝缘栅（MOSFET） 沟道类型：N沟道 导电方式：增强型 用途：A/宽频带放大 封装外形：CER-DIP/陶瓷直插 材料：ALGaAS铝镓砷 IRF3415 HEXFET® Power MOSFET PD - 91477D Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A IDM Pulsed Drain Current ? ...
