种类：绝缘栅（MOSFET）

沟道类型：N沟道

导电方式：增强型

用途：A/宽频带放大

封装外形：CER-DIP/陶瓷直插

材料：ALGaAS铝镓砷

IRF3415

HEXFET®

 Power MOSFET PD - 91477D Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A IDM Pulsed Drain Current ? 150 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy? 590 mJ IAR Avalanche Current? 22 A EAR Repetitive Avalanche Energy? 20 mJ dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RqJC Junction-to-Case ––– 0.75 RqCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RqJA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = 150V RDS(on) = 0.042W ID = 43A TO-220AB • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description  

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