昆山东森微电子有限公司:致力于为客户提供原装进口的集成电路 二极管 三极管 MOS管 可控硅 光耦,二十年的品质 和原厂良好的合作关系,打造电子元件代理商品牌!因本公司主要以批发为主,利润微薄,所有元件价格均以当天报价为准,欢迎电话询价和索取元件规格书!
UNISONIC TECHNOLOGIES CO., LTD
22N60 Power MOSFET
HEXFET POWER MOSFET
DESCRIPTION
As the SMPS MOSFET, the UTC 22N60 uses UTC’s
advanced technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 240 mΩ
* Ultra Low Gate Charge ( Typical 150 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 36 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
TO-247
1
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen Free
Package
1 2 3
Packing
22N60L-T47-T 22N60G-T47-T TO-247 G D S Tube
TYN612 - HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY - STMicroelectronics Table 1: Main FeaturesDESCRIPTIONAvailable either in sensitive (TS12) or standard(TN12 / TYN) gate triggering levels, the 12A SCRseries is suitable to fit all modes of control, foundin applications such as overvoltage crowbarprotection, motor control circuits in power toolsand kitchen aids, inrush current limiting circuits,capacitive discharge ignition and voltageregulation circuits...Symbol Value UnitIT(RMS) 12 AVDRM/VRRM 600 to 1000 VIGT 0.2 to 15 mA
昆山现货IR原装进口MOS管/场效应管IRFU3910PbF I-PAK封装 产品型号: IRFU3910 产品名称: 品牌/产地: IR公司 封装规格: I-Pak 产品描述: 是否含铅: 未知 PDF分类: 非IC器件 > 分立器件 > 晶体管 产品参数信息: 参数名 参数值 Circuit Discrete Polarity N VBRDSS (V) 100 RDS(on) Max 2.7V (mOhms) RDS(on) Max 4.5V (mOhms) RDS(on) Max 10V (mOhms) 115 ID @ TC = 25C (A) 15 ID @ TC = 100C (A) 9.5 ID @ TA = 25C (A) ID @ TA = 70C (A) Qg Typ (nC) 29.3 Qgd Typ (nC) 14 Rth(JC) (K/W) 2.4 Power Dissipation @ TC = 25C ( 52 Power Dissipation @ TA = 25C ( Part Status Active PbF PbF Option Available 1K Budgetary Pricing (USD) .975 数据手册: 文件名: NULL 文件大小: 0.00 KB 下载次数: 3 下载: