50N06场效应管热卖 MOS管 台湾友顺UTC
| 价 格： | 面议 |
品牌:UTC（台湾友顺） 型号:50N06 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道
1，UTC（台湾友顺）品牌优质低压MOS管！支持免费试样！
2，常备现货，杜绝供应不稳定和质量不稳定给您带来的烦恼！
3，珠三角支持快递代收货款，全国支持支付宝！
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
FEATURES
* RDS(ON) =23mΩ@VGS= 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
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高压MOS管 650VMOSFET 8N60 塑封
信息内容：品牌:UTC（台湾友顺） 型号:8N60 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTIONThe UTC 8N60 is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in powersupplies, PWM motor controls, high efficient DC to DC convertersand bridge circuits. FEATURES* RDS(ON) =1.2Ω@VGS= 10 V* Ultra low gate charge ( typical 28 nC )* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness dzsc/18/2292/18229211.jpg
现货供应铁封插件高压MOS管 UTC 2N60L
信息内容：品牌:UTC（台湾友顺） 型号:2N60L 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道 漏极电流:2000（mA） 耗散功率:54000（mW）1、TO-220铁头封装。50PCS/管，1K/盒。 2、UTC(台湾友顺)品牌MOS管。 3、0-4个工作日发货。珠三角支持快递代收，全国范围支持支付宝。 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 2N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedswitching applications in power supplies, PWM motor controls, highefficient DC to DC converters and bridge circuits.FEATURES* RDS(ON) =5Ω@VGS= 10V* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (CRSS = typical 5.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
