现货供应铁封插件高压MOS管 UTC 2N60L
| 价 格： | 25000.00 |
品牌:UTC（台湾友顺） 型号:2N60L 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道 漏极电流:2000（mA） 耗散功率:54000（mW）
1、TO-220铁头封装。50PCS/管，1K/盒。
2、UTC(台湾友顺)品牌MOS管。
3、0-4个工作日发货。珠三角支持快递代收，全国范围支持支付宝。
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =5Ω@VGS= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
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单向可控硅 US104S/N-6
信息内容：品牌:UTC（台湾友顺） 型号:US104S/N-6 控制方式:单向可控硅 极数:三极 封装材料:塑料封装SCRsDESCRIPTIONThanks to highly sensitive triggering levels, theUTC US104S is suitable for all applications where theavailable gate current is limited, such as motor controlfor hand tools, kitchen aids, overvoltagecrowbar protection for low power supplies, ...Available in through-hole or surface-mountpackages, they provide an optimized performancein a limited space area.
P沟道MOS管UTC
信息内容：品牌/商标 UTC 型号/规格 UTD405 种类 绝缘栅(MOSFET) 沟道类型 P沟道 导电方式 耗尽型 封装外形 SMD(SO)/表面封装 材料 P-FET硅P沟道 P-CHANNEL ENHANCEMENT MODE DESCRIPTIONThe UTD405 can provide excellent RDS(ON), low gatecharge and low gate resistance by using advanced trenchtechnology. This device is well suited for high current loadapplications with the excellent thermal resistance. FEATURES* RDS(ON) = 32mΩ @VGS = -10 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified
