白光LED升压电路 L5100
| 价 格： | 0.10 |
| 品牌/商标 | UTC(台湾友顺） | 型号/规格 | L5100 |
| 批号 | 09 | 封装 | SOT-25,SOT-363 |
| 类型 | 其他IC |
WHITE LED STEP-UP
CONVERTER
DESCRIPTION
The UTC L5100 is a STEP-UP DC/DC Converter and
designed for driving white LEDs with a constant current. It can drive
several LEDs in series by a Li-Ion cell. UTC L5100 switches at a
high frequency 1.2MHz, so it can allow the use of tiny external
components. The output capacitor can be as small as 0.22μF; saving
space and cost compare with alternative other solutions. The low
95mV feedback voltage minimizes power loss in the current setting
resistor can have better efficiency.
FEATURES
* Inherently Matched LED Current
* High Efficiency: 83% Typical
* Drives Up to Four LEDs from a 3.2V Supply
* Drives Up to Six LEDs from a 5V Supply
* 36V Rugged Bipolar Switch
* 1.2MHz Switching Frequency
* Uses Tiny 1mm Tall Inductors
* Output Capacitor can be small to only 0.22μF
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 宋哲
- 电话：755-29743120
- 传真：755-29743120
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50N06场效应管热卖 MOS管 台湾友顺UTC
信息内容：品牌:UTC（台湾友顺） 型号:50N06 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道1，UTC（台湾友顺）品牌优质低压MOS管！支持免费试样！2，常备现货，杜绝供应不稳定和质量不稳定给您带来的烦恼！3，珠三角支持快递代收货款，全国支持支付宝！ 50 Amps, 60 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 50N06 is three-terminal silicon device with currentconduction capability of about 50A, fast switching speed. Lowon-state resistance, breakdown voltage rating of 60V, and maxthreshold voltages of 4 volt.It is mainly suitable electronic ballast, and low power switchingmode power appliances.FEATURES* RDS(ON) =23mΩ@VGS= 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* Improved dv/dt capability
高压MOS管 650VMOSFET 8N60 塑封
信息内容：品牌:UTC（台湾友顺） 型号:8N60 种类:绝缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTIONThe UTC 8N60 is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in powersupplies, PWM motor controls, high efficient DC to DC convertersand bridge circuits. FEATURES* RDS(ON) =1.2Ω@VGS= 10 V* Ultra low gate charge ( typical 28 nC )* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness dzsc/18/2292/18229211.jpg
