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应用霍尔效应闭环原理的电流传感器,能在电隔离条件下测量直流、交流、脉冲以及各种 不规则波形的电流。
dzsc/18/2287/18228714.jpg
dzsc/18/2287/18228714.jpg
1、错误的接线可能导致传感器损坏。传感器通电后,当被测电流从传感器箭头方向穿过,即可在输出端测得同相电压值。 |
DDR SDRAM 是Double Data Rate Synchronous Dynamic Random Access Memory(双数据率同步动态随机存储器)的简称,是由VIA等公司为了与RDRAM相抗衡而提出的内存标准。DDR SDRAM是SDRAM的更新换代产品,采用2.5v工作电压,它允许在时钟脉冲的上升沿和下降沿传输数据,这样不需要提高时钟的频率就能加倍提高SDRAM的速度,并具有比SDRAM多一倍的传输速率和内存带宽,例如DDR 266与PC 133 SDRAM相比,工作频率同样是133MHz,但内存带宽达到了2.12 GB/s,比PC 133 SDRAM高一倍。目前主流的芯片组都支持DDR SDRAM,是目前最常用的内存类型。 DESCRIPTION描述The Hynix HY5DU561622ETP is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suitedfor the point-to-point applications which requires high bandwidth.The Hynix 16Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of theclock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,Data strobes and Write data masks inputs are sampled on both rising and fall...
dzsc/18/2287/18228716.gif RD Relays dzsc/18/2287/18228716.jpg Inrush current 100A 40A continuous rating at 70 ¡É PC Board terminal SPST & SPDT configurations Optional mounting bracke 1. Contact Data Contact Form 1A 1C Contact Material AgNi AgSnO Contact Ratings 1A:40A 14VDC 1C:30A 14VDC Max Switching Voltage 30VDC Max Switching Current 30A Max Switching Power 630W Contact Resistance 100m¥ØMax. at 6VDC 1A Life Expectancy Electrical 100,000 Operations (at30 Operations / minute) Machanical 10,000,000 Operations 2. General Data Insulation Resistance 100M Min at 500VDC Dielectric Strength Between Open Contacts 500VAC (for one minute) Between Contacts and coil 750VAC (for one minute) Operate Time 5ms Release Time 4ms Temperature Range -40 C to +85 C Shock Resistance 20G,11ms half sine wave pulse Vibration Resistanc...