价 格: | 面议 | |
型号/规格: | RHU002N06 | |
品牌/商标: | ROHM | |
封装形式: | sot-23 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | 小功率 |
RHU002N06
!Features
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
!Structure
Silicon N-channel
MOSFET transistor
RTE002P002 Structure External dimensions (Unit : mm)Silicon P-channel MOS FETFeatures1) Low On-resistance.2) Small package (EMT3).3) 2.5V drive.Applicatio
FEATURE 30V/12A, RDS(ON) = 13mΩ (Typ.)@VGS = 10V 30V/10A, RDS(ON) = 18mΩ@VGS = 4.5V Super high density cell design forextremely low RDS(ON) Exceptional on-resistance andmaximum DC current capability SOP-8 package design