价 格: | 面议 | |
型号/规格: | RTE002P002 | |
品牌/商标: | rohm | |
封装形式: | sot-523 | |
环保类别: | 无铅环保型 | |
安装方式: | 贴片式 | |
包装方式: | 卷带编带包装 | |
功率特征: | 小功率 |
RTE002P002
Structure External dimensions (Unit : mm)
Silicon P-channel MOS FET
Features
1) Low On-resistance.
2) Small package (EMT3).
3) 2.5V drive.
Applicatio
FEATURE 30V/12A, RDS(ON) = 13mΩ (Typ.)@VGS = 10V 30V/10A, RDS(ON) = 18mΩ@VGS = 4.5V Super high density cell design forextremely low RDS(ON) Exceptional on-resistance andmaximum DC current capability SOP-8 package design
ApplicationsSwitchingFeatures1) Low on-resistance.2) Fast switching speed.3) Low voltage drive (1.8V) makes this device ideal forportable equipment.4) Drive circuits can be simple.5) Parallel use is easy.