产品规格︰ |
CSNR161
型号 IPN 原边额定输入电流 50 100 125 200 A IP 原边电流测量范围 0~±150 (±18V,100Ω) 0~±300 (±18V,68Ω) 0~±375 (±18V,15Ω) 0~±600 (±18V,12Ω) A ISN 副边额定输出电流 50±0.5% 50±0.5% 125±0.5% 100±0.5% mA KN 匝数比 1:1000 1:2000 1:1000 1:2000 VC 电源电压 ±12~±18(±5%) V IC 电流消耗 VC=±18V 10+Is mA Vd 绝缘电压 在原边与副边电路之间3KV有效值/50Hz/1分钟 εL 线性度 <0.1 %FS X 精度 ±0.7 % I0 零点失调电流 TA = mA IOT 失调电流温漂 IP=0 TA = -25~+85℃ ≤±0.005 mA/℃ Tr 响应时间 <1 μs f 频带宽度(-3dB) DC~200 kHz TA 工作环境温度 -25~+85 ℃ TS 贮存环境温度 -40~+100 ℃ RS 副边线圈内阻(TA =25℃) 30 45 30 45 Ω 标准 Q/3201CHGL02-2007 |
供应20V,2A N-CH MOS管IFDN327N FDN327NN-Channel 1.8 Vgs Specified PowerTrenchÒ MOSFETGeneral DescriptionThis 20V N-Channel MOSFET uses Fairchild’s highvoltage PowerTrench process. It has been optimized forpower management applications.Applications· Load switch· Battery protection· Power managementFeatures· 2 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 VRDS(ON) = 80 mW @ VGS = 2.5 VRDS(ON) = 120 mW @ VGS = 1.8 V· Low gate charge (4.5 nC typical)· Fast switching speed· High performance trench technology for extremelylow RDS(ON)
供应20V,2.4A P-CH MOS管FDN304P FDN304PP-Channel 1.8V Specified PowerTrench MOSFETGeneral DescriptionThis P-Channel 1.8V specified MOSFET usesFairchild’s advanced low voltage PowerTrench process.It has been optimized for battery power managementapplications.Applications• Battery management• Load switch• Battery protectionFeatures• –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 VRDS(ON) = 70 mΩ @ VGS = –2.5 VRDS(ON) = 100 mΩ @ VGS = –1.8 V• Fast switching speed• High performance trench technology for extremelylow RDS(ON)• SuperSOTTM -3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint