品牌:ST,FAIR 型号:L7812CV 批号:H08 封装:TO-220 营销方式:厂家直销 产品性质:热销 处理信号:模拟信号 制作工艺:半导体集成 导电类型:双极型 集成程度:中规模 工作温度:-40~85(℃)
批发L7812CV三端稳压IC
品牌:ST/意法型号:ST3400种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型封装外形:SMD(SO)/表面封装材料:N-FET硅N沟道开启电压:30(V) 夹断电压:12(V) 跨导:-(μS) 极间电容:`(pF) 低频噪声系数:`(dB) 漏极电流:`(mA) 耗散功率:`(mW) N Channel Enhancement Mode MOSFET ST3400 5.8ADESCRIPTIONThe ST2306 is the N-Channel logic enhancement mode power field effect transistor isproduced using high cell density, DMOS trench technology.This high-density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone andnotebook computer power management and other batter powered circuits, and low in-linepower loss are needed in a very small outline surface mount package. FEATUREz 30V/5.8A, RDS(ON) = 70m-ohm@VGS = 10Vz 30V/5.8A, RDS(ON) = 95m-ohm@VGS = 5Vz Super high density cell design forextremely low RDS(ON)z Exceptional on-resistance and maximumDC current capabilityz SOT-23-3L /SOT-23 pac...
品牌:ST/意法型号:ST2306种类:绝缘栅(MOSFET)沟道类型:N沟道导电方式:增强型封装外形:SMD(SO)/表面封装材料:N-FET硅N沟道开启电压:30(V) 夹断电压:0.4(V) 跨导:-(μS) 极间电容:`(pF) 低频噪声系数:`(dB) 漏极电流:`(mA) 耗散功率:`(mW) N Channel Enhancement Mode MOSFET ST23063.5ADESCRIPTIONThe ST2306 is the N-Channel logic enhancement mode power field effect transistor isproduced using high cell density, DMOS trench technology.This high-density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone andnotebook computer power management and other batter powered circuits, and low in-linepower loss are needed in a very small outline surface mount package. FEATUREz 30V/3.5A, RDS(ON) = 70m-ohm@VGS = 10Vz 30V/2.8A, RDS(ON) = 95m-ohm@VGS = 5Vz Super high density cell design forextremely low RDS(ON)z Exceptional on-resistance and maximumDC current capabilityz SOT-23-3L /SOT-23 pa...