直销批发场效应管ST3400
| 价 格： | 0.35 |
| 品牌：ST/意法 | 型号：ST3400 | 种类：绝缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 封装外形：SMD(SO)/表面封装 |
| 材料：N-FET硅N沟道 | 开启电压：30（V） | 夹断电压：12（V） |
| 跨导：-（μS） | 极间电容：`（pF） | 低频噪声系数：`（dB） |
| 漏极电流：`（mA） | 耗散功率：`（mW） |
N Channel Enhancement Mode MOSFET ST3400
5.8A
DESCRIPTION
The ST2306 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outline surface mount package.
FEATURE
z 30V/5.8A, RDS(ON) = 70m-ohm
@VGS = 10V
z 30V/5.8A, RDS(ON) = 95m-ohm
@VGS = 5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L /SOT-23 package design
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 许惠谦
- 电话：0755-82533222
- 传真：0755-82533222
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批发供应场效应管ST2306
信息内容：品牌：ST/意法型号：ST2306种类：绝缘栅(MOSFET)沟道类型：N沟道导电方式：增强型封装外形：SMD(SO)/表面封装材料：N-FET硅N沟道开启电压：30（V） 夹断电压：0.4（V） 跨导：-（μS） 极间电容：`（pF） 低频噪声系数：`（dB） 漏极电流：`（mA） 耗散功率：`（mW） N Channel Enhancement Mode MOSFET ST23063.5ADESCRIPTIONThe ST2306 is the N-Channel logic enhancement mode power field effect transistor isproduced using high cell density, DMOS trench technology.This high-density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone andnotebook computer power management and other batter powered circuits, and low in-linepower loss are needed in a very small outline surface mount package. FEATUREz 30V/3.5A, RDS(ON) = 70m-ohm@VGS = 10Vz 30V/2.8A, RDS(ON) = 95m-ohm@VGS = 5Vz Super high density cell design forextremely low RDS(ON)z Exceptional on-resistance and maximumDC current capabilityz SOT-23-3L /SOT-23 pa...
批发供应场效应管ST2302
信息内容：品牌：ST/意法型号：ST2302种类：绝缘栅(MOSFET)沟道类型：N沟道导电方式：增强型用途：MIN/微型封装外形：SMD(SO)/表面封装材料：GE-N-FET锗N沟道开启电压：20（V） 夹断电压：12（V） 跨导：-（μS） 极间电容：,（pF） 低频噪声系数：,（dB） 漏极电流：,（mA） 耗散功率：,（mW） N Channel Enchancement Mode MOSFET ST23023.6ADESCRIPTIONThe ST2302 is the N-Channel logic enhancement mode power field effect transistor areproduced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone andnotebook computer power management and other batter powered circuits, and low in-linepower loss are needed in a very small outine surface mount package. FEATUREz 20V/3.6A, RDS(ON) = 80m-ohm@VGS = 4.5Vz 20V/2.4A, RDS(ON) = 95m-ohm@VGS = 2.5Vz Super high density cell design forextremely low RDS(ON)z Exceptional on-resistance and maximumDC current capabili...
