原装ST,可控硅,BTA08,600C
| 价 格： | 1.45 |
品牌:ST/意法半导体 型号:BTA08-600C 控制方式:双向 极数:三极 封装材料:塑料封装 封装外形:TO-220 关断速度:普通 散热功能:带散热片 功率特性:小功率 频率特性:变频 额定正向平均电流:8（A） 控制极触发电压:1.3（V） 控制极触发电流:5-50（mA） 正向重复峰值电压:600（V） 反向阻断峰值电压:-（V）
dzsc/17/3298/17329844.jpg
■
| Standard (4 quadrants)
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Symbol
| Test Conditions
| Quadrant
|
| BTA08 / BTB08
| Unit
|
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C
| B
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IGT(1)
| VD= 12 V
| RL= 30 ?
| I - II - III IV
| MAX.
| 25 50
| 50 100
| mA
|
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VGT
| ALL
| MAX.
| 1.3
| V
|
| ||||||||||||||||||||
VGD
| VD= VDRM
| RL= 3.3 k?
| Tj
| = 125°C
| ALL
| MIN.
| 0.2
| V
|
| ||||||||||||||||
IH(2)
| IT= 500 mA
|
|
|
| MAX.
| 25
| 50
| mA
|
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IL
| IG= 1.2 IGT
|
|
|
| I - III - IV
| MAX.
| 40
| 50
| mA
|
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II
| 80
| 100
|
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dV/dt (2)
| VD
| =
| 67 %VDRM
| gate open
| Tj
| = 125°C
| MIN.
| 200
| 400
| V/µs
|
| ||||||||||||||
(dV/dt)c (2)
| (dI/dt)c = 5.3 A/ms
|
| Tj
| = 125°C
| MIN.
| 5
| 10
| V/µs
|
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Table 5: Static Characteristics
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Symbol
|
| Test Conditions
| Value
| Unit
|
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VT(2)
| ITM= 11 A
| tp= 380 µs
| Tj
| = 25°C
| MAX.
| 1.55
| V
|
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Vto(2)
| Threshold voltage
| Tj
| = 125°C
| MAX.
| 0.85
| V
|
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Rd(2)
| Dynamic resistance
| Tj
| = 125°C
| MAX.
| 50
| m?
|
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IDRM IRRM
| VDRM= VRRM
| Tj
| = 25°C
| MAX.
| 5
| µA
|
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Tj
| = 125°C
| 1
| mA
|
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Note 1:minimum IGTis guaranted at 5% of IGTmax.Note 2:for both polarities of A2 referenced to A1.
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供应ST可控硅,BTA41,BTA41-600B
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