供应5V 整流二极管D915
| 价 格： | 面议 | |
| 型号/规格： | D915，印记5D | |
| 品牌/商标： | 国产 | |
| 封装形式： | SOT-23 | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 卷带编带包装 | |
| 功率特性： | | |
| 频率特性： | | |
| 整流电流： | A | |
| 反向击穿电流： | |
供应5V 整流二极管D915
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈树辉
- 电话：0755-82534577/13076512089
- 传真：0755-82534577
- 手机：13686868407
- QQ ：
供应30V,0.85A N-CH MOS管BSH103
信息内容：供应30V,0.85A N-CH MOS管BSH103 FEATURES· Very low threshold· High-speed switching· No secondary breakdown· Direct interface to C-MOS, TTL etc.APPLICATIONS· Power management· DC to DC converters· Battery powered applications· ‘Glue-logic’; interface between logic blocks and/orperiphery· General purpose switch.DESCRIPTIONN-channel enhancement mode MOS transistor in a SOT23SMD package.
供应60V,115MA N-CH MOS管2N7002
信息内容：供应60V,115MA N-CH MOS管2N7002 2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect TransistorGeneral Description Features___________________________________________________________________________________________Absolute Maximum Ratings TA = 25°C unless otherwise notedSymbol Parameter 2N7000 2N7002 NDS7002A UnitsVDSS Drain-Source Voltage 60 VVDGR Drain-Gate Voltage (RGS < 1 MW) 60 VVGSS Gate-Source Voltage - Continuous ±20 V- Non Repetitive (tp < 50μs) ±40ID Maximum Drain Current - Continuous 200 115 280 mA- Pulsed 500 800 1500PD Maximum Power Dissipation 400 200 300 mWDerated above 25oC 3.2 1.6 2.4 mW/°CTJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °CTL Maximum Lead Temperature for SolderingPurposes, 1/16" from Case for 10 Seconds300 °CTHERMAL CHARACTERISTICSRqJAThermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W2N7000.SAM Rev. A1These N-Channel enhancement mode field effect transistorsare produced using Fairchild's propr...
