信息内容:
供应600V,30A,N-CH MOS管IRG4PC50KD(内含二极管)
Features
Short Circuit Rated UltraFast: Optimized for highoperating frequencies >5.0 kHz, and Short Circuit Ratedto 10μs @125°C, VGE = 15Vl Generation 4 IGBT design provides tighter parameterdistribution and higher efficiency than Generation 3l IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft recovery anti-parallel diodes for use inbridge configurationsl Industry standard TO-247AC packageBenefitsl Generation 4 IGBTs offer highest efficiencies availablel HEXFRED diodes optimized for performance with IGBTs.Minimized recovery characteristics require less/no snubbingl Designed to be a "drop-in" replacement for equivalentindustry-standard Generation 3 IR IGBTs