供应600V,30A,N-CH MOS管IRG4PC50KD(内含二极管)
Features
Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10μs @125°C, VGE = 15V
l Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
l IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft recovery anti-parallel diodes for use in
bridge configurations
l Industry standard TO-247AC package
Benefits
l Generation 4 IGBTs offer highest efficiencies available
l HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
l Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
2-Phase Stepper Motor Bipolar Driver ICs A3952SB/SLB/SW 参数 说明 Description 全挢式PWM 电动机驱动器 Pin/Package 12-Pin SIP 重量 5.2gFeatures Fixed off-time PWM current control Switching between power supply regenerationmode and loop regeneration mode inorder to improve motor current response inmicrostepping External filter for sense terminal not required Sleep (low current consumption) mode Brake operation with PWM current limiting Internal thermal shutdown circuitry Internal crossover-current protection circuitry Internal UVLO protection Internal transient-suppression diodes Low thermal resistance package
IR2112是IR公司生产的大功率MOSFET、和IGBT专用集成驱动电路。该芯片具有两个独立的高低端通道,其中高端通道可采用自举电路,可承受500 V电压。两通道输出的电压范围为10~20 V,IR2112逻辑电源和功率电源即可以相互独立也可以共用一个电源。其工作频率可达500 kHz,关断和延迟时间很短。IR2112输出采用图腾柱结构,输出电流可达2 A。 如图3所示,用功率MOSFET构成PWM逆变器,用单片机作为信号源,产生频率为20~38 kHz的方波、2.5~3 W/cm2的功率;阻抗匹配使超声电源向换能器负载实现功率传输。图3中VD1,C1为自举二极管和自举电容,VD1必须使用与功率开关管相同耐压等级的快恢复二极管,自举电容设计也至关重要,C1的耐压比功率器件充分导通时所需的驱动电压(典型值为10 V)高。若在C1的充电路径上有1.5 V的压降,且假定有一半的栅压因泄露而降低,则自举电容C1可按式(4)来选取: dzsc/17/2059/17205907.jpg式中:Qg为MOSFET的门极电荷。 工程应用上一般取C1>2Qg/(VCC-10-1.5),且应选取容量稳定,耐脉冲电流的无感电容。 dzsc/17/2059/17205907.jpg 而控制电路主要由单片机系统和驱动电路组成。单片机系统通过自身的PWM驱动电路产生频率为2...