耐压:20V,耐流3A
主要应用于数码产品的USB高电频供电!
可代替,AO3401
Feature 60V/0.5A, RDS(ON) = 7500mΩ(MAX) @VGS = 10V. Id = 0.5ARDS(ON) = 7500mΩ(MAX) @VGS = 4.5V. Id = 0.2A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package.
RHU002N06 !Features1) Low on-resistance.2) High ESD.3) High-speed switching.4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to use in parallel.!StructureSilicon N-channelMOSFET transistor