MOS管，STF2HNK60ZFP

TYPICAL RDS(on) = 4.4Ω
EXTREMELY HIGH dv/dt CAPABILITY
D IMPROVED CAPABILITY
100% ALANCHE TTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DCRIPTION
The SuperMH™ seri is obtained through an
extreme optimization of ST’s well tablished stripbased
PowerMH™ layout. In addition to pushing
on-ristance significantly down, special care is taken
to ensure a very good dv/dt capability for the
most demanding applications. Such seri complements
ST full range of high voltage MOSFETs including
revolutionary MDmh™ products.